霍爾傳感器是根據(jù)霍爾效應(yīng)制作的一種磁場(chǎng)傳感器?；魻栃?yīng)是磁電效應(yīng)的一種，這一現(xiàn)象是霍爾（1855—1938）于1879年在研究金屬的導(dǎo)電機(jī)構(gòu)時(shí)發(fā)現(xiàn)的。后來發(fā)現(xiàn)半導(dǎo)體、導(dǎo)電流體等也有這種效應(yīng)，而半導(dǎo)體的霍爾效應(yīng)比金屬強(qiáng)得多，利用這現(xiàn)象制成的各種霍爾元件，廣泛地應(yīng)用于工業(yè)自動(dòng)化技術(shù)、檢測(cè)技術(shù)及信息處理等方面?；魻栃?yīng)是研究半導(dǎo)體材料性能的基本方法。通過霍爾效應(yīng)實(shí)驗(yàn)測(cè)定的霍爾系數(shù)，能夠判斷半導(dǎo)體材料的導(dǎo)電類型、載流子濃度及載流子遷移率等重要參數(shù)。
霍爾傳感器是依據(jù)霍爾效應(yīng)制作的。是霍爾1879年在研究金屬導(dǎo)電機(jī)構(gòu)時(shí)發(fā)明的，之后有在導(dǎo)電流體和半導(dǎo)體中均發(fā)現(xiàn)此效應(yīng)。霍爾器件擁有著眾多特點(diǎn)，它體積小，重量輕，安裝方便，功耗小，頻率高還生命長，耐振動(dòng)不怕油污，水汽，鹽霧灰塵等污染。
霍爾效應(yīng)傳感器也稱霍爾傳感器，是一個(gè)換能器，將變化的磁場(chǎng)轉(zhuǎn)化為輸出電壓的變化?；魻杺鞲衅魇紫仁菍?shí)用于測(cè)量磁場(chǎng)，此外還可測(cè)量產(chǎn)生和影響磁場(chǎng)的物理量，例如被用于接近開關(guān)、霍爾、位置測(cè)量、轉(zhuǎn)速測(cè)量和電流測(cè)量設(shè)備。
通常，霍爾效應(yīng)傳感器和電路相連，從而允許設(shè)備以數(shù)位（開/關(guān)）模式操作，在這種情況下可以被稱為開關(guān)。工業(yè)中常見的設(shè)備，例如氣缸，也被用于日常設(shè)備中，如一些打印機(jī)使用他們來監(jiān)測(cè)缺紙和敞蓋的情況。當(dāng)鍵盤被要求高可靠性時(shí)，便也設(shè)計(jì)霍爾傳感器在其按鍵內(nèi)。
霍爾電流傳感器
霍爾電流傳感器基于磁平衡式霍爾原理，根據(jù)霍爾效應(yīng)原理，從霍爾元件的控制電流端通入電流Ic，并在霍爾元件平面的法線方向上施加磁場(chǎng)強(qiáng)度為B的磁場(chǎng)，那么在垂直于電流和磁場(chǎng)方向（即霍爾輸出端 之間），將產(chǎn)生一個(gè)電勢(shì)VH，稱其為霍爾電勢(shì)，其大小正比于控制電流I。與磁場(chǎng)強(qiáng)度B的乘積。 即有式中：K為霍爾系數(shù)，由霍爾元件的材料決定；I為控制電流;B為磁場(chǎng)強(qiáng)度; VH為霍爾電勢(shì)。
霍爾電流傳感器是按照霍爾效應(yīng)原理制成，對(duì)安培定律加以應(yīng)用，即在載流導(dǎo)體周圍產(chǎn)生一正比于該電流的磁場(chǎng)，而霍爾器件則用來測(cè)量這一磁場(chǎng)。因此，使電流的非接觸測(cè)量成為可能。
Holzer sensor is a magnetic field sensor based on Holzer effect. Hall effect is a kind of magnetoelectric effect, which was discovered by Hall (1855-1938) in 1879 when he studied the conductive mechanism of metals. It was found that semiconductors and conducting fluids also have this effect, and the Hall effect of semiconductors is much stronger than that of metals. Various Hall elements made from this phenomenon are widely used in industrial automation technology, detection technology and information processing. Holzer effect is the basic method to study the properties of semiconductor materials. The Hall coefficient measured by Hall effect experiment can be used to judge the conductive type, carrier concentration and carrier mobility of semiconductor materials.
The Holzer sensor is based on the Holzer effect. It was invented by Hall in 1879 when he studied the conductive mechanism of metals, and this effect was later found in conducting fluids and semiconductors. Hall devices have many characteristics, such as small size, light weight, easy installation, low power consumption, high frequency and long life, vibration resistance is not afraid of oil pollution, water vapor, salt spray dust and other pollution.
Hall effect sensor, also known as Hall sensor, is a transducer that converts the changing magnetic field into the change of the output voltage. Hall sensors are first used to measure magnetic fields, in addition to measuring physical quantities that produce and affect magnetic fields, such as proximity switches, halls, position measurements, rotational speed measurements, and current measurements.
In general, Hall effect sensors are connected to circuits that allow devices to operate in digital (on/off) mode, in which case they can be called switches. Common devices in industry, such as cylinders, are also used in everyday equipment, such as some printers that use them to monitor paper shortages and openings. When the keyboard is required to be highly reliable, the Holzer sensor is also designed in its key.
Hall Current Sensor
Hall current sensor is based on magnetic balance Hall principle. According to Hall effect principle, current Ic is introduced from the control current end of Hall element, and magnetic field intensity B is applied in the normal direction of Hall element plane. Then an electric current will be generated perpendicular to the direction of current and magnetic field (i.e. between Hall output). The potential VH is called the Holzer potential, which is proportional to the control current I. The product of magnetic field intensity B. That is, in the formula: K is the Hall coefficient, determined by the material of the Hall element; I is the control current; B is the magnetic field strength; VH is the Hall potential.
Hall current sensor is based on the principle of Hall effect, the application of ampere law, that is, around the current-carrying conductor to produce a magnetic field proportional to the current, and Hall devices are used to measure this magnetic field. Therefore, it is possible to make the non-contact measurement of the current.
